发明名称 |
HOCHSPANNUNGS-HALBLEITERBAUELEMENT |
摘要 |
A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone. |
申请公布号 |
AT334480(T) |
申请公布日期 |
2006.08.15 |
申请号 |
AT19990929017T |
申请日期 |
1999.04.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEBOY, GERALD;STENGL, JENS-PEER;STRACK, HELMUT;WEBER, HANS;GRAF, HEIMO;RUEB, MICHAEL;AHLERS, DIRK |
分类号 |
H01L21/336;H01L29/06;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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