发明名称 In-line wafer surface mapping
摘要 A method and apparatus for the topographical profiling of a raw substrate is carried out during in-line processing of the substrate during which additional films and structures have been formed over the raw substrate surface. The method includes forming a dielectric film over the substrate surface and forming a metal film over the dielectric film. The structure is polished and monitored during various stages of the polishing operation. An interferometer is used to monitor the surface being polished and to distinguish between regions where metal remains and regions in which metal has been removed and the underlying dielectric material exposed. Topographical data, such as a substrate map, is generated by monitoring the time at which the metal film is removed from various spatial locations across the substrate. The substrate map may be generated during polishing, for in-line monitoring.
申请公布号 US7091053(B2) 申请公布日期 2006.08.15
申请号 US20040810533 申请日期 2004.03.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 YANG WAN-CHENG
分类号 H01L21/00;B24B1/00;B24B37/04;B24B49/12;B24B51/00 主分类号 H01L21/00
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