| 摘要 |
A semiconductor device that reduces the parasitic capacitance between a conductive trace and a substrate, and a method of fabricating the same. The semiconductor device includes a substrate, an insulator layer disposed upon the substrate, a conductive trace disposed upon the insulator layer, and an element disposed between the substrate and the conductive trace. A first capacitance exists between the conductive trace and the substrate and a second capacitance results between the conductive trace and the substrate due to the presence of the element. The second capacitance is in series with the first capacitance, thereby reducing an effective capacitance between the conductive trace and the substrate.
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