Gate and CMOS structure and MOS structure

摘要

Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 10² S.m^-1, nor more than 10⁵ S.m^-1 without impurities and has a band structure like that of a semiconductor.