发明名称 |
End-of-range defect minimization in semiconductor device |
摘要 |
A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing portions of the deep amorphous regions to reduce their depth, and re-crystallizing the reduced amorphous regions to form activated final source/drain regions.
|
申请公布号 |
US7091097(B1) |
申请公布日期 |
2006.08.15 |
申请号 |
US20040933424 |
申请日期 |
2004.09.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PATON ERIC N.;XIANG QI;TABERY CYRUS E.;YU BIN;OGLE ROBERT B. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|