发明名称 Method of manufacturing a photo mask and method of manufacturing a semiconductor device
摘要 Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
申请公布号 US7090949(B2) 申请公布日期 2006.08.15
申请号 US20030724738 申请日期 2003.12.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOJIMA SHIGEKI;MIMOTOGI SHOJI;TANAKA SATOSHI;KOTANI TOSHIYA;HASEBE SHIGERU;HASHIMOTO KOJI;INOUE SOICHI;IKENAGA OSAMU
分类号 G01F9/00;G03F1/08;G03F1/00;G03F1/14;G03F1/36;G03F1/68;G03F1/84;G03F7/20;G03F9/00;H01L21/00;H01L21/027 主分类号 G01F9/00
代理机构 代理人
主权项
地址