发明名称 |
Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby |
摘要 |
An integrated circuit device is formed by providing a substrate and forming a capacitor on the substrate. The capacitor includes a lower electrode disposed on the substrate, a dielectric layer on the lower electrode, and an upper electrode on the dielectric. A hydrogen barrier insulation layer is formed on the upper electrode and a hydrogen barrier spacer is formed on a sidewall of the capacitor.
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申请公布号 |
US7091102(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20030742727 |
申请日期 |
2003.12.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM HAN-JIN;LEE KWANG-HEE;CHUNG SUK-JIN;YOO CHA-YOUNG;KIM WAN-DON;LEE JIN-IL |
分类号 |
H01L21/20;H01L21/02;H01L21/314;H01L21/8242;H01L21/8246;H01L27/108 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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