发明名称 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
摘要 The contents by weight ratio of lanthanum oxide, gallium oxide, and silicon oxide, which are components, in the longitudinal cross-section and transverse cross-section of the straight part, excluding the shoulder part, of a Langasite single crystal ingot grown by pulling-up Langasite is within a range of ±0.05% with respect to the target amounts at all measured locations, and because of having a superior homogeneity in the content of components over the entire ingot, when used, for example, in a piezoelectric device such as an surface acoustic wave filter, has properties for industrial application that contribute to the stabilization of characteristics as well as reducing the costs.
申请公布号 US7090724(B2) 申请公布日期 2006.08.15
申请号 US20030297491 申请日期 2003.08.11
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 WANG SHOUQI;UDA SATOSHI
分类号 C30B15/20;C30B15/00;H03H9/02 主分类号 C30B15/20
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