发明名称 |
Method of fabricating silicon nitride nanodots |
摘要 |
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N<SUB>2 </SUB>as the source gas.
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申请公布号 |
US7092287(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20030739901 |
申请日期 |
2003.12.17 |
申请人 |
ASM INTERNATIONAL N.V. |
发明人 |
BEULENS JACOBUS JOHANNES;WAN YUET MEI |
分类号 |
G11C16/00;H01L21/28;H01L21/31;H01L21/318;H01L21/336 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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