发明名称 Method of fabricating silicon nitride nanodots
摘要 A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N<SUB>2 </SUB>as the source gas.
申请公布号 US7092287(B2) 申请公布日期 2006.08.15
申请号 US20030739901 申请日期 2003.12.17
申请人 ASM INTERNATIONAL N.V. 发明人 BEULENS JACOBUS JOHANNES;WAN YUET MEI
分类号 G11C16/00;H01L21/28;H01L21/31;H01L21/318;H01L21/336 主分类号 G11C16/00
代理机构 代理人
主权项
地址