发明名称 |
Fast recovery diode with a single large area p/n junction |
摘要 |
A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
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申请公布号 |
US7091572(B2) |
申请公布日期 |
2006.08.15 |
申请号 |
US20050233760 |
申请日期 |
2005.09.23 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
ANDOH KOHJI;FIMIANI SILVESTRO;RUE REDDA FABRIZIO;CHIOLA DAVIDE |
分类号 |
H01L29/861;H01L21/329;H01L29/06;H01L29/32;H01L29/40;H01L31/107 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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