Solid photovoltaic device for use as domestic photovoltaic generator, has nickel oxide based p type-transparent semiconductor filling/covering to cover absorber layer disposed on surface of titanium oxide based nanocrystalline layer

摘要

The device has a transparent conducting substrate (4) covered with a titanium oxide based non-porous layer (5). A titanium oxide based nanocrystalline porous layer (1) is disposed on the substrate. An absorber material layer (2) is disposed on the surface of the nanocrystalline porous layer. A nickel oxide based p type-transparent semiconductor filling or covering (3) covers the absorber layer present inside the nanocrystalline layer. The absorber material layer is selected from cadmium sulfide, bismuth sulfide, tin sulfide, molybdenum sulfide, copper sulfide, and cobalt oxide. An independent claim is also included for a method to prepare a solid photovoltaic device.