Multi-gate e.g. double gate, field effect transistor, has channel with multilayer structure that has conditioning layers arranged to have electric properties capable of constraining adjacent conducting layer to confine charge carriers

摘要

The transistor has a drain (40) and a source (50) that are situated at the respective ends of a channel (10). The channel is separated from the grids by dielectric layers. The channel has a multilayer structure including conditioning layers and charge carriers conducting layers. Each conditioning layer is arranged to have electric properties capable of constraining an adjacent conducting layer to confine the charge carriers.