Solid-state photovoltaic device for house roof, has monolithic layer with pores in form of channels transversally extending across thickness of layer, having inner surface covered by absorber layer, and filled with semiconductor layer

摘要

The device has a transparent n or p type semiconductor component with a monolithic layer (1) arranged between a transparent substrate (4) and a rear contact (6). The layer has pores (11) in the form of channels transversally extending across the thickness of the layer (1). The pores with an inner surface covered with a thin absorber layer (2) are filled with a semiconductor layer in a volumetric proportion of greater than 50 percent. The semiconductor layer is of a type opposite to that of the semiconductor component.