| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of washing a process device which can prevent the generation of particles in a chamber, and to provide a program for implementing the method, and a storage medium. SOLUTION: A plasma processing apparatus 1 having a chamber 10 for performing a plasma treatment to a wafer W, and a CPU 53 for controlling the operation of each constituting element, introduces a first condition specified in the quantity of a gas flow and the amount of gas molecules of a processing gas, and, more particularly, introduces the processing gas inside a chamber 10, based on the product A<SB>1</SB>(=Q<SB>1</SB>×m<SB>1</SB>) of the flow rate Q<SB>1</SB>and the molecular weight m<SB>1</SB>of the processing gas. After the front surface of the wafer W is physically or chemically etched, pre-purge gas different from the processing gas is introduced from a shower head 33 into the chamber 10, based on the second conditions to be introduced according to the above first condition. COPYRIGHT: (C)2006,JPO&NCIPI
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