SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of attaining low power consumption, while fully ensuring write margin. SOLUTION: An SRAM cell 1 is provided with inverters 10, 20; N type FETs 32, 34, 36, 38; word lines 42, 44; bit lines 46, 48; and voltage application circuits 50, 60. The voltage application circuits 50, 60, respectively give a voltage (Vdd+α) to the word lines 42, 44 in the case of write operations of the SRAM cell, whereαis greater than 0. That is, the SRAM cell 1 is configured so that the voltage given to the word lines 42, 44 in the write operations is higher than that in reading operations. COPYRIGHT: (C)2006,JPO&NCIPI