发明名称 |
Post etch copper cleaning using dry plasma |
摘要 |
A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.
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申请公布号 |
US2006178008(A1) |
申请公布日期 |
2006.08.10 |
申请号 |
US20050053018 |
申请日期 |
2005.02.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH CHEN-NAN;HSU MIAO-JU;TAO HUN-JAN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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