发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.</p> |
申请公布号 |
WO2006083380(A2) |
申请公布日期 |
2006.08.10 |
申请号 |
WO2005US43293 |
申请日期 |
2005.11.30 |
申请人 |
TOKYO ELECTRON LIMITED;WAJDA, CORY;LEUSINK, GERT |
发明人 |
WAJDA, CORY;LEUSINK, GERT |
分类号 |
H01L21/26;H01L21/84;H01L21/425 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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