发明名称 |
FILM DEPOSITION METHOD, STRUCTURE AND PIEZOELECTRIC ELEMENT MANUFACTURED USING THE SAME, AND LIQUID DISCHARGE HEAD MANUFACTURING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film deposition method that uses an AD method to enable a film to be deposited at a relatively high temperature and the formation of a high precision pattern. <P>SOLUTION: The method of using an aerosol deposition method to deposit a film having a desired pattern comprises a step (a) of forming a first film containing a constituent having an amorphous structure on a target object; a step (b) of crystallizing the constituent having the amorphous structure contained in the first film in an desired film deposition region where a second film is deposited; and a step (c) of depositing the second film on the first film deposition region which is crystallized in the step (b) by injecting powder of film deposition material from a nozzle towards the first film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006210896(A) |
申请公布日期 |
2006.08.10 |
申请号 |
JP20050373607 |
申请日期 |
2005.12.26 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
NIHEI YASUKAZU |
分类号 |
H05K3/10;B05D1/02;B05D7/24;B41J2/16;H01L41/09;H01L41/18;H01L41/314;H01L41/316;H01L41/319;H01L41/39;H01L41/43 |
主分类号 |
H05K3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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