| 摘要 |
PROBLEM TO BE SOLVED: To provide a selective etching method capable of evaluating a crystal defect of an ultra-low resistant silicon single crystal substrate having electric resistivity of <10 mΩcm, especially BMD (bulk micro defects) properties, which can not be easily detected by conventional methods, by selectively etching using a chromium-less etching solution which does not contain harmful chromium and utilizing the silicon single crystal substrate. SOLUTION: The selective etching method is characterized by etching a silicon single crystal substrate having electric resistivity of <10 mΩcm at a speed of >0.1μm/min using a selective etching solution at least containing hydrofluoric acid of 0.02-0.1, nitric acid of 0.5-0.6, acetic acid of 0.2-0.25, and water in volume ratios, and developing BMD on the surface of the silicon single crystal substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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