SPIN QUBIT-BASED QUANTUM COMPUTING LOGIC GATE

摘要

The present invention relates to a spin qubit-based quantum computing logic gate. The manufacturing method of the present invention includes the step of forming a conduction channel and multi-lateral gates vertical to the conduction channel on the same plane or on a gate oxide film in such a manner as to be spaced apart from each other by several tens of nano meters or less, wherein the conduction channel connects a source and drain to a top-Si layer of a Silicon On Insulator (SOI) substrate and a dual quantum dot having a line width and length of several tens of nano meters will be formed in the conduction channel, doping the remaining portions other than the dual quantum dot, forming the gate oxide film or an interlayer insulation layer corresponding to a proposed structure, forming a control gate inducing a two-dimensional electron gas layer in the conduction channel, and performing a typical metallization process.