| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce the leakage current via a high dielectric film. <P>SOLUTION: The semiconductor device comprises a single crystal silicon region 6, a polycrystalline or amorphous semiconductor film 7 which is formed on the silicon region 6 and contains at least one element among silicon and germanium, the high dielectric film 8 formed on the semiconductor film 7, and an electrode 12 formed on the high dielectric film 8. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
