HALL ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a Hall element which can have an excellent sensitivity with a novel arrangement, and also a method for manufacturing the Hall element. SOLUTION: An n-type epitaxial layer 2 is formed on a p-type silicon substrate 1. Four n+regions (electrode diffusion regions) 3, 4, 5, 6 are formed in the n-type epitaxial layer 2. An insulating layer 9 of a predetermined depth is formed around the n+region 4 around the n+region 5, and around the n+region 6 in the main surface S1 of the epitaxial layer 2; and restricts a current path region A1 formed between the n+regions 3 and 4 in the insulating layer 9. Side surfaces of the n+regions 5, 6 are covered with the insulating layer 9 so as to come into contact with the epitaxial layer 2 at the bottom exposed from the insulating layer 9. COPYRIGHT: (C)2006,JPO&NCIPI