发明名称 Nonvolatile nanochannel memory device using mesoporous material
摘要 A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer having metal nanoparticles or metal ions fed into the nanochannels is disposed between an upper electrode and a lower electrode. Thus, the memory device has high processability, and manifests excellent reproducibility and uniform performance.
申请公布号 US2006175653(A1) 申请公布日期 2006.08.10
申请号 US20050237891 申请日期 2005.09.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JOO WON J.;YIM JIN H.;LEE KWANG H.;LEE SANG K.
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
主权项
地址
您可能感兴趣的专利