发明名称 NAND FLASH MEMORY AND DATA PROGRAMMING METHOD THEREOF
摘要 A semiconductor integrated circuit device includes even-numbered bit lines (BLe), odd-numbered bit lines (BLo), cell source lines (CELSRC), first memory elements electrically connected between the even-numbered bit lines and the cell source lines, and second memory elements electrically connected between the odd-numbered bit lines and the cell source lines and belonging to the same rows as the first memory elements. A potential corresponding to data to be programmed is applied to the first memory element via the even-numbered bit line and a potential which suppresses programming is applied to the second memory element via the cell source line while the odd-numbered bit lines are kept in an electrically floating state when data is programmed into the first memory element.
申请公布号 WO2006082472(A1) 申请公布日期 2006.08.10
申请号 WO2005IB02921 申请日期 2005.09.30
申请人 KABUSHIKI KAISHA TOSHIBA;MAEJIMA, HIROSHI 发明人 MAEJIMA, HIROSHI
分类号 G11C16/04;G11C16/10;H01L27/115 主分类号 G11C16/04
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