Desaturation circuitry for insulated gate bipolar transistor, has switching component switched between gate and collector of bipolar transistor, where gate voltage is lowered until voltage lies around forward bias of diode

摘要

The circuitry has a diode and a switching mechanism with two inputs and two outputs. A control signal input is provided for switching electrical conductive connection between the inputs and outputs, on and off. The diode and the mechanism lie in series and a switching component (6) is switched between the gate and collector of a bipolar transistor, where gate voltage is lowered until the voltage lies around a forward bias of the diode. Independent claims are also included for the following: (1) an integrated circuit with desaturation circuitry (2) a method of desaturating an insulated gate bipolar transistor.