发明名称 |
SEMICONDUCTOR DEVICE PROVIDED WITH MOS TRANSISTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a MOS transistor operable with high accuracy at a high speed under a low voltage. <P>SOLUTION: The semiconductor device is provided with: at least one MOS transistor 10 including a gate input section 12 and a body input section 14; and a control circuit 20 including a first output section 22 for sending a first control signal (gate voltage V<SB>g</SB>(t)) to the gate input section 12, and a second output section 22 for sending a second control signal (body voltage V<SB>b</SB>(t)) to the body input section 14. The control circuit 20 turns on the MOS transistor 10 through the application of the gate voltage V<SB>g</SB>(t) and thereafter changes a level of the body voltage V<SB>b</SB>(t) to increase a threshold value of the MOS transistor 10 while the MOS transistor 10 stays in the ON state. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006211158(A) |
申请公布日期 |
2006.08.10 |
申请号 |
JP20050018867 |
申请日期 |
2005.01.26 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KATAYAMA KOJI;INOUE AKIRA;TAKAGI TAKESHI |
分类号 |
H03K17/04;H03F3/70;H03K17/30;H03K17/687;H03K19/094 |
主分类号 |
H03K17/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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