| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor for a communication apparatus the enhanced power gain and high frequency output characteristic. SOLUTION: A U-shape is adopted for a planar shape of an outer base layer 11 for interconnecting a genuine base region and a base electrode 20B. Then a collector electrode 20C and an emitter electrode 20E are alternately arranged in parallel within a plane in parallel with a principal side of a substrate 1, in a manner that the long side of each collector electrode 20C and the long side of each emitter electrode 20E are arranged in parallel. On the other hand, the base electrode 20B is arranged at the outside of a straight line tying respective one-side ends of the collector electrodes 20C and the emitter electrodes 20E, and the long side of the base electrode 20B is oriented so as to be orthogonal to the respective long sides of the collector electrodes 20C and those of the emitter electrodes 20E. COPYRIGHT: (C)2006,JPO&NCIPI
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