| 摘要 |
PROBLEM TO BE SOLVED: To simplify manufacturing process of a semiconductor device including a core transistor and two kinds of I/O transistors whose power supply voltages differ from each other. SOLUTION: The power supply voltage Vdd1 of the core transistor Tr1, the power supply voltage Vdd2 of the I/O transistor Tr2, and the power supply voltage Vdd3 of the I/O transistor Tr3 hold a relationship of Vdd1<Vdd2<Vdd3. In the manufacturing method of the semiconductor device, gate insulation films 3a of the I/O transistors Tr2, Tr3 are formed in the same manufacturing process with the same film thickness. Then the SD extension region 16 of the core transistor Tr1 and an SD extension region 17 of the I/O transistor Tr2 are formed with the same dose amount. COPYRIGHT: (C)2006,JPO&NCIPI
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