MANUFACTURING METHOD OF BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTOR MANUFACTURED THEREWITH

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of voltage resistance and high power bipolar transistor having improved a direct current amplifying coefficient. SOLUTION: A base electrode pattern 9a and an emitter electrode pattern 10a are formed respectively on the upper part of a base region 3 and an emitter region 4. As the forming method, an Al film is formed with the sputtering process from aluminum (Al) as an electrode material and this film is changed to an electrode pattern with the dry etching process. Next, the base electrode 9b and emitter electrode 10b where the surfaces thereof are oxidized are formed through the heat treatment under the atmosphere of water as the oxidizing agent and oxygen. COPYRIGHT: (C)2006,JPO&NCIPI