| 摘要 |
PROBLEM TO BE SOLVED: To efficiently apply a tensile stress to a channel area in a p-chennel MOS transistor formed on a strained SOI substrate. SOLUTION: When a p-channel MOS transistor is formed on a strained Si channel layer having a non-strained SiGe mixed crystal layer in its lower layer, the non-strained SiGe mixed crystal layer is epitaxially grown to an SiGe mixed crystal area, and the strained Si channel layer is lattice-matched with the SiGe mixed crystal layer area. Thus, the stress in the strained Si channel layer is prevented from being released, and efficient application of stress is achieved. COPYRIGHT: (C)2006,JPO&NCIPI
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