| 摘要 |
Disclosed is a method for producing integrated circuits comprising silicon-germanium heterobipolar transistors. Said method is subdivided into several modules (module 1a, 1b, 2, 3a, 3b). A connecting module for creating a joining region, a collector-emitter module for creating a collector region bordering the connecting region and/or an emitter region bordering the connecting region, and a base module for creating a base region are defined as modules (module 1a, 1b, 2, 3a, 3b) of the inventive method. Said modules (module 1a, 1b, 2, 3a, 3b) are provided with such points of intersection (l<SUB>12</SUB>, l<SUB>23</SUB>) among each other that at least one process step (P1, P2, P3, P4, P5, P6, P7, P8, or P9) of a module (module 1a, 1b, 2, 3a, 3b) is modified independently of the process steps (P1, P2, P3, P4, P5, P6, P7, P8, or P9) of the other modules (module 1a, 1b, 2, 3a, 3b) while maintaining the point of intersection (l<SUB>12</SUB>, l<SUB>23</SUB>) of the method in order to develop a technology version that deviates from the previously existing technology version. |
