GaN LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE

摘要

A GaN light emitting diode having improved light emitting efficiency and a light emitting device using such GaN light emitting diode are provided. In the GaN light emitting diode, on an n-type GaN semiconductor layer (2), a light emitting layer (3) composed of a GaN semiconductor and a p-type GaN semiconductor layer (4) are successively formed, and on a surface of the p-type GaN semiconductor layer (4), a p-type ohmic electrode (P2) is formed in a pattern having a window section. A metal reflecting layer (P5) for reflecting the light that reaches from the light emitting layer through the window section is formed to sandwich the p-type ohmic electrode (P2) with the p-type GaN semiconductor layer (4), and a protection film (P4) made of an insulator is provided between the reflection layer (P5) and the p-type ohmic electrode (P2). In a preferable embodiment of the GaN light emitting diode, having the uppermost surface layer of the reflection layer (P5) as a bonding layer or by further forming a bonding layer on the reflection layer (P5), the bonding layer and a mounting board are bonded with a conductive bonding material.