| 摘要 |
FIELD: design and manufacture of semiconductor radiation monitoring systems operating in broad and limited wave bands. ^ SUBSTANCE: proposed optical radiation sensor is made in the form of sandwich structure of ferroelectric and semiconductor layers. Ferroelectric film of sandwich structure is made of non-doped polarized material and semiconductor film, of unipolar material, ferroelectric-film surface charge polarity being same as that of main carriers of semiconductor film. Optical radiation monitoring system has above-described optical radiation sensor, data processing unit, and ac power supply one of whose poles is connected to ferroelectric film. External electric circuit incorporates switching unit, controller, phase discriminator, and AND gate. Semiconductor film sections are connected to data processing unit through switching unit; second pole of power supply is connected through switching unit to semiconductor film electrodes to form sensor clearing circuit. Phase discriminator unit is coupled with power supply output and its output is connected to first input of AND gate; first output of controller is connected to control input of data processing unit, its second output, to control input of switching unit, and third output of controller is connected to second input of AND gate; output of the latter is connected to control input of power supply. ^ EFFECT: ability to obtain characteristic bearing data on received optical radiation dose and to limit spectral measurement range. ^ 6 cl, 1 dwg, 1 tbl |
