| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-single-crystal solar battery that has better curve factor and conversion efficiency and improved cell characteristics as compared with a boron-doped p-type thin film, to provide a method for manufacturing the non-single-crystal solar battery, and to provide an apparatus for manufacturing the non-single-crystal solar battery in the non-single-crystal solar battery having at least one pin junction in which a p-type semiconductor layer 3 mainly made of silicon or germanium, an essentially intrinsic i-type semiconductor layer 5, and an n-type semiconductor layer 6 are laminated. <P>SOLUTION: In a delta-doped layer, at least one p-type semiconductor layer 3 is made of a gallium-doped p layer 31 and an i-type semiconductor layer 32. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
