| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a level shifter by making the impression of high bias on MOSFET reduced. SOLUTION: A primary isolation region 14 and secondary isolation region 8 are formed inside the upper surface of a P substrate 13. Then, a source 5c, channel 15 and drain 5b are formed inside the primary isolation region 14, and a gate 5a is arranged at the upper part of the primary isolation region 14. As a result, an NMOSFET 5 is formed. After that, a high-voltage section, including a high-voltage resistant pinch resistor 3 is arranged inside the secondary separation region 8 separated from the primary isolation region, and this high-potential section is connected to the NMOSFET 5 by using wires 18a and 18b. COPYRIGHT: (C)2006,JPO&NCIPI
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