METHOD OF FORMING FILLED ISOLATION REGION OF SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE HAVING THE FILLED ISOLATION REGION

摘要

PROBLEM TO BE SOLVED: To provide an improved method of forming a filled isolation region of a semiconductor substrate, and to provide a method of forming a semiconductor device, having the filled isolation region and cooling the device and giving body potential control. SOLUTION: A semiconductor structure and a method of forming the semiconductor structure are disclosed. The semiconductor structure includes a nanostructure or is manufactured by using the nanostructure. The method of forming the semiconductor structure includes the steps of generating the nanostructure, by using a nano mask and performing an additional semiconductor processing step by using the nanostructure thus generated. COPYRIGHT: (C)2006,JPO&NCIPI