METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device with a good property which prevents formation of fine particles by reaction of a transparent conductive film with an etching gas. SOLUTION: This invention relates to a method of manufacturing the semiconductor device, characterized by comprising the steps of: forming the transparent conductive film; forming a first conductive film on the transparent conductive film; forming a second conductive film on the first conductive film; etching the second conductive film with a gas containing chlorine; and etching the first conductive film with a gas containing fluorine. When the second conductive film is etched with the gas containing chlorine, the transparent conductive film is protected by the first conductive film. When the first conductive film is etched with the gas containing fluorine, as the transparent conductive film is not reacted with the gas containing fluorine, any particles are not formed. COPYRIGHT: (C)2006,JPO&NCIPI