发明名称 |
Nitride-based semiconductor device of reduced voltage drop, and method of fabrication |
摘要 |
A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.
|
申请公布号 |
US2006175628(A1) |
申请公布日期 |
2006.08.10 |
申请号 |
US20060378963 |
申请日期 |
2006.03.17 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
OTSUKA KOJI;MOKU TETSUJI;SATO JUNJI;TADA YOSHIKI;YOSHIDA TAKASHI |
分类号 |
H01L21/00;H01L21/20;H01L29/20;H01L29/267;H01L33/06;H01L33/12;H01L33/16;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|