发明名称 Semiconductor device and method of manufacturing the same
摘要 In a ferroelectric capacitor structure 30 in which a lower electrode and an upper electrode are coupled capacitively with each other through a ferroelectric film, when the upper electrode is formed into a two-layer structure in which a conductive oxide film and an oxidation-resistant metal film are stacked, a protective film is formed on the oxidation-resistant metal film, and the upper electrode of which upper surface alone is covered with the protective film is pattern formed.
申请公布号 US2006175642(A1) 申请公布日期 2006.08.10
申请号 US20050138448 申请日期 2005.05.27
申请人 FUJITSU LIMITED 发明人 DOTE AKI;KOMURO GENICHI
分类号 H01L29/94 主分类号 H01L29/94
代理机构 代理人
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