发明名称 |
System and device including a barrier layer |
摘要 |
Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.
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申请公布号 |
US2006175673(A1) |
申请公布日期 |
2006.08.10 |
申请号 |
US20060389369 |
申请日期 |
2006.03.24 |
申请人 |
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发明人 |
POWELL DON C.;MERCALDI GARRY A.;WEIMER RONALD A. |
分类号 |
H01L29/94;H01L21/28;H01L21/312;H01L21/316;H01L21/318;H01L29/51 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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