| 摘要 |
A method of plasma treatment, characterized in that it comprises a step of placing a substrate having a film of a metal or metal compound formed on the surface thereof in a treatment chamber, a step of feeding a rare gas and H2 gas into the treatment chamber, and a step of producing a plasma during the step of feeding a rare gas and H2 gas and removing a naturally formed oxide film on the surface of the film of the metal or metal compound by the action of the plasma. The method allows the reduction of the naturally formed oxide film by the activated hydrogen in the plasma and simultaneous etching of the naturally formed oxide film by the active species of the rare gas therein, since a plasma is produced in a treatment chamber with the feed of a rare gas and H2 gas thereto and the plasma is acted on the naturally formed oxide film on the surface of a film of the metal or metal compound, which leads to the removal of the naturally formed oxide film with a satisfactory selection ratio. |
