| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suitably suppressing an increase of a parasitic capacity incidental thereto even when a collector layer is highly concentrated in order to improve a cut-off frequency. SOLUTION: A method of manufacturing the semiconductor device comprises the steps of: using an active region 2a containing an n-type dopant surrounded by an element isolation film 3 provided on a p-type silicon substrate 1 as a collector layer; forming an n-type diffusion layer 5 functioning as an emitter layer on SiGe alloy layers 4 provided on a top face of the p-type silicon substrate 1 containing the active region 2a; using a first alloy layer 4a located directly under the emitter layer among the SiGe alloy layers 4 as a base layer; using a portion adjacent thereto as a p<SP>+</SP>diffusion layer 10 functioning as an external base layer; and forming on a front surface of the active region 2a an impurity region 20 to which the n-type dopant is added so as to surround a portion located directly under the base layer. COPYRIGHT: (C)2006,JPO&NCIPI
|
