| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor crystal thin film and a manufacturing apparatus, with the size of a crystal being large and the planarity being high. SOLUTION: In the method for manufacturing the semiconductor crystal thin film, a laser is irradiated on a semiconductor thin film 11 formed on a substrate. This method includes steps of crystallizing the semiconductor thin film 11, by using a slit beam group 111 of a first type formed with main laser beams, and sub-laser beams 120, having an irradiation area containing the slit beam group 111 of the first type, to form the semiconductor crystal thin film; and reducing the height of a ridge occurred in the semiconductor crystal thin film by using a slit beam group 112 of a second type, formed with the main laser beams. COPYRIGHT: (C)2006,JPO&NCIPI
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