| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device by covering the entire top face of a main electrode with a uniform solder solid film layer to reduce thermal resistance at an interconnection joint consisting of solder and thereby improving the heat dissipation efficiency. <P>SOLUTION: An emitter electrode 2 is divided by a gate liner 4. To protect the gate liner 4, a polyimide film 7 is formed on the surface of the gate liner 4. Then, the polyimide film 7 is coated with a metal foil 8 formed of Cu, Au, etc. which has a good solder wettability, and then solder is placed on top of the metal foil 8, and a conductive plate 6 is placed on the solder. When the solder is melted in a reflow furnace, the molten solder is allowed to flow and is extended to adjacent molten solders via the metal foil 7, thus forming the uniform solder solid film layer 9, with the molten solder never divided by the polyimide film 7. Then, the uniform solder solid film layer 9 is solidified to join the conductive plate. Consequently, the thermal resistance at the interconnection joint consisting of solder is reduced, which results in the improvement in heat dissipation efficiency and eventually leads to a reliable semiconductor device. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
