发明名称 METHOD OF HEATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To raise the temperature of a substrate at high speed, while the temperature of a substrate is maintaining uniformly. SOLUTION: The substrate 14 is forced on a heater cover 15 in which the substrate 14 is placed by a pusher 19 so that a clearance makes it hard to be able to form between the heater cover 15 and the substrate 14. A low cost H<SB>2</SB>with high thermal conductivity is introduced into a deposition chamber, and a temperature rises. The density of the H<SB>2</SB>is reduced once at the timing when the substrate 14 starts floating from the heater cover 15 by the warpage of the substrate 14. When the temperature of the substrate 14 becomes uniform, it is again elevated in the density of the H<SB>2</SB>. The molecule density of the H<SB>2</SB>is controlled to become 1×10<SP>23</SP>pieces/m<SP>3</SP>to 3×10<SP>23</SP>pieces/m<SP>3</SP>(1,000 Pa), and preferably near 2×10<SP>23</SP>pieces/m<SP>3</SP>. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006210440(A) 申请公布日期 2006.08.10
申请号 JP20050017507 申请日期 2005.01.25
申请人 MITSUBISHI HEAVY IND LTD 发明人 SASAGAWA EISHIRO;FUJIYAMA TAIZO;YAMANE TSUKASA;FUKAGAWA MASAYUKI
分类号 H01L21/205 主分类号 H01L21/205
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