| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystalline silicon reducing furnace capable of easily depositing polycrystalline silicon without causing surface profile defect or warpage, and a polycrystalline silicon rod. SOLUTION: The polycrystalline silicon reducing furnace has a plurality of silicon core rods 13 erected on the furnace base 11 of a hermetically closed reaction furnace, an introducing port 15 for supplying a raw material gas, and an exhaust port 16 for exhausting a gas after reaction, and the silicon rods are arranged to satisfy at least one of following conditions of (1)-(3). When there are 2 introducing ports arranged adjacent to the silicon core rod, each center of the 2 introducing ports and the center of the silicon core rod form an angle of≥135°... (1). When there are N introducing ports (N≥3), the 2 introducing ports in N introducing ports and the silicon rod form an angel of≥160°... (2). When there are N introducing ports (N≥3), adjacent 2 introducing ports in N introducing ports and the silicon core rod form an angle of≥240/N°and≤480/N°in all combination... (3). COPYRIGHT: (C)2006,JPO&NCIPI
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