发明名称 |
METHOD FOR PHOTOMASK PLASMA ETCHING USING PROTECTIVE MASK |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for etching a chromium layer during photomask fabrication. <P>SOLUTION: The invention provides a method for forming a photomask by etching chromium. In one embodiment, a method for etching chromium includes steps of: preparing a film stack having a chromium layer in a processing chamber; patterning a photoresist layer on the film stack; depositing a conformal protective layer on the patterned photoresist layer; etching the conformal protective layer to expose the chromium layer through the patterned photoresist layer; and etching the chromium layer. This method for etching chromium is particularly suitable for fabricating a photomask. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006209128(A) |
申请公布日期 |
2006.08.10 |
申请号 |
JP20060016897 |
申请日期 |
2006.01.25 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
CHANDRACHOOD MADHAVI;KUMAR AJAY;YAU WAI-FAN |
分类号 |
G03F1/08;C23F4/00;H01L21/027;H01L21/3065 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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