| 摘要 |
PROBLEM TO BE SOLVED: To improve the mechanical strength of a low dielectric constant insulating film comprising a porous film. SOLUTION: After the appropriate quantity of a solution 14, comprising a silicon resin 2, fine particles 3 containing bonds of silicon atoms and oxygen atoms and having holes and a solvent 4, is dropped onto a semiconductor wafer 12, the solution 14 is spread to form a thin film 15. Thereafter, the low dielectric constant insulating film 15A comprising the thin film 15 is formed by heating the wafer 12. COPYRIGHT: (C)2006,JPO&NCIPI
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