发明名称 Immersion exposure method and apparatus, and manufacturing method of a semiconductor device
摘要 There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.
申请公布号 US2006177776(A1) 申请公布日期 2006.08.10
申请号 US20050315000 申请日期 2005.12.23
申请人 MATSUNAGA KENTARO;KONO TAKUYA;ITO SHINICHI 发明人 MATSUNAGA KENTARO;KONO TAKUYA;ITO SHINICHI
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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