| 摘要 |
A high voltage laterally double-diffused metal oxide semiconductor (LDMOS) structure is characterized as follows: the second source electrode metal layer connected to the first source electrode metal layer protrudes out of a certain length relative to the first source electrode metal layer of the source electrode region connected thereto. The second drain electrode metal layer connected to the first drain electrode metal layer protrudes out of a certain length relative to the first drain electrode metal layer of the drain electrode region. The protruded length overlaps more portions of the drift layer than the first source electrode metal layer and the first drain electrode metal layer disposed below, to reduce the electric field concentration of the gate electrode interface or the interface between the N+ type drain electrode layer and the N-type extended drift layer.
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